Title: Effect of substrate temperature on hot-filament CVD grown diamond films at constant filament current

Authors: M. Ali; I.A. Qazi

Addresses: Department of Physics, COMSATS Institute of Information Technology, 44000, Park Road, Islamabad, Pakistan. ' School of Civil and Environmental Engineering, National University of Sciences and Technology, 44000, Islamabad, Pakistan

Abstract: This is a systematic study of diamond films grown over silicon substrate by the hot-filament chemical vapour deposition technique at substrate temperatures of 750-50-1,000°C. The resulting films are characterised using the scanning electron microscope, X-ray diffraction and Raman spectroscopy. Our observations are that with the increase in the substrate temperature the morphology of deposited film changed from cauliflower structure to pyramidal featured structure. At substrate temperature of 950°C, planar growth of diamond film was observed, showing good purity crystals. This type of growth has potential for applications where atomically flat surface at localised regions is a prime concern.

Keywords: thin films; crystal structure; crystal morphology; growth rate; surface science; substrate temperature; hot filament diamond films; constant filament current; CVD; chemical vapour deposition; silicon substrate; crystal purity.

DOI: 10.1504/IJSURFSE.2012.049054

International Journal of Surface Science and Engineering, 2012 Vol.6 No.3, pp.214 - 230

Received: 23 Jul 2011
Accepted: 23 Nov 2011
Published online: 21 Aug 2014 *

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