Title: Design and properties research of capacitive RF-MEMS switch

Authors: Hai Guo; Jinghua Yin; Mingxin Song; Jingying Zhao

Addresses: Harbin University of Science and Technology, 52 Xuefu Load, Nangang, Harbin, China; College of Computer Science and Engineering, Dalian Nationalities University, 18 Liaohe West Road, Dalian Development Zone, Dalian, 116600, China. ' Harbin University of Science and Technology, 52 Xuefu Load, Nangang, Harbin, China. ' Harbin University of Science and Technology, 52 Xuefu Load, Nangang, Harbin, China. ' College of Computer Science and Engineering, Dalian Nationalities University, 18 Liaohe West Road, Dalian Development Zone, Dalian, 116600, China

Abstract: Three structures of capacitive RF-switches are presented, which are stimulated by the software, and the influences of the switch structure parameters on the driven voltage and nature frequency are studied respectively. Based on the research of the stimulation and analysis, the driven voltage value of the straight beam type switch is bigger than the cable-stayed and the bending beam type switches. But the straight beam has the bigger nature frequency. Cable stayed and the bending beam type switches have a small elastic constant, which results in a small driven voltage value.

Keywords: stimulus generation; RF MEMS switches; microelectromechanical systems; capacitive RF switches; switch structures.

DOI: 10.1504/IJSPM.2012.047871

International Journal of Simulation and Process Modelling, 2012 Vol.7 No.1/2, pp.123 - 131

Published online: 15 Nov 2014 *

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