Title: Stimulus generation for RF MEMS switches test application

Authors: Mingxin Song; Jinghua Yin; Zuobao Cao; Tong Wu; Yu Zhao; Zhao Jin; Amir Zjajo

Addresses: Harbin University of Science and Technology, P.O. Box 124, #52 Xuefu Road, Nangang District, 150080, Heilongjiang, China; NXP Semiconductors, HTC-32, Eindhoven 5656AE, The Netherlands. ' Harbin University of Science and Technology, P.O. Box 124, #52 Xuefu Road, Nangang District, 150080, Heilongjiang, China. ' Harbin University of Science and Technology, P.O. Box 124, #52 Xuefu Road, Nangang District, 150080, Heilongjiang, China. ' Harbin University of Science and Technology, P.O. Box 124, #52 Xuefu Road, Nangang District, 150080, Heilongjiang, China. ' Harbin University of Science and Technology, P.O. Box 124, #52 Xuefu Road, Nangang District, 150080, Heilongjiang, China. ' Harbin University of Science and Technology, P.O. Box 124, #52 Xuefu Road, Nangang District, 150080, Heilongjiang, China. ' Circuit and System Group, Delft University of Technology, Mekelweg 4, 2628 CD, Delft, The Netherlands; NXP Semiconductors, HTC-32, Eindhoven 5656AE, The Netherlands

Abstract: The sinewave generators based on switched-capacitor (SC) technologies are implemented in transistor level. This analogue sinewave generator consists of two parts: an approximate sinewave generator and a filter. The structure of this generator is robust and easily-controlled, in which an approximate sinewave is firstly generated based on SC circuits and then filter the harmonics. The main advantages of the approach are that both the amplitude and the frequency of the signal can be controlled by a DC input voltage and the clock frequency respectively. The amplitude of the sinewave is 400 mV with SNR of 42.2 dB at a supply voltage of 1.2 V. The settling time of the system is less than 0.5 u and the power is less than 5 mW.

Keywords: switched-capacitor circuits; built-in self-testing; stimulus generation; RF MEMS switches; microelectromechanical systems; sinewave generators; RF switches.

DOI: 10.1504/IJSPM.2012.047870

International Journal of Simulation and Process Modelling, 2012 Vol.7 No.1/2, pp.107 - 114

Published online: 15 Nov 2014 *

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