Title: High tunable Ba0.5Sr0.5TiO3 thin film deposited on silicon substrate with MgO buffer layer

Authors: Jie Hou; Congchun Zhang; Chunsheng Yang; Guifu Ding

Addresses: National Key Laboratory of Science and Technology on Nano/Micro Fabrication Technology, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai, 200240, China. ' National Key Laboratory of Science and Technology on Nano/Micro Fabrication Technology, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai, 200240, China. ' National Key Laboratory of Science and Technology on Nano/Micro Fabrication Technology, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai, 200240, China. ' National Key Laboratory of Science and Technology on Nano/Micro Fabrication Technology, Research Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai, 200240, China

Abstract: High tunable Ba0.5Sr0.5TiO3 thin films were deposited by r.f. magnetron sputtering on Si substrate. MgO, as a buffer layer, was deposited by r.f. magnetron sputtering. An interdigital varactor was fabricated by micro-fabrication process and the dielectric properties were investigated. The results show that the crystallisation of Ba0.5Sr0.5TiO3 was improved by the insertion of MgO buffer layer after the post annealing process. The MgO buffer layer enhances the oriental growth of BST along (100). Also, the tunability of the Ba0.5Sr0.5TiO3 thin films was improved and the dielectric loss greatly decreased.

Keywords: MgO; buffer layers; magnetron sputtering; tunability; magnesium oxide; thin films; thin film deposition; silicon substrate; dielectric loss; microfabrication.

DOI: 10.1504/IJNM.2011.043691

International Journal of Nanomanufacturing, 2011 Vol.7 No.5/6, pp.567 - 574

Received: 06 Nov 2010
Accepted: 15 Apr 2011
Published online: 07 Mar 2015 *

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