Title: Modelling on dressing effects in chemical mechanical polishing with diamond dressers

Authors: Kuen-Ren Chen, Hong-Tsu Young

Addresses: National Taiwan University, Room 138, Engineering Building, No. 1, Sec. 4, Roosevelt Rd., Taipei 10617, Taiwan. ' National Taiwan University, Room 138, Engineering Building, No. 1, Sec. 4, Roosevelt Rd., Taipei 10617, Taiwan

Abstract: To achieve global planarisation, chemical mechanical polishing (CMP) is used in the semiconductor manufacturing process. To maintain the stability and the throughput of CMP, the polishing pad needs to be dressed by a diamond dresser. By calculating the distribution of the scratch numbers of diamond grit in the pad, the effect of dressing can be estimated and the pad profile can be predicted. Different types of dressers, including ring-type and full-type, different pitches and arrangements are used in CMP process. The diamond pitch is relative to the number of diamonds and the scale of the total scratch time, but does not affect the profile of the scratch time. Regular or random arrangement makes no difference in the profile of the scratch times. The width of the ring influences the number of diamonds and the scale of the total counts although the profiles remain similar.

Keywords: chemical mechanical polishing; CMP; diamond dressers; pad dressing; trajectory analysis; semiconductor manufacturing; polishing pads; pad profile; scratch time; abrasive technology.

DOI: 10.1504/IJAT.2010.032458

International Journal of Abrasive Technology, 2010 Vol.3 No.1, pp.1 - 10

Published online: 03 Apr 2010 *

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