Int. J. of Nanotechnology   »   2010 Vol.7, No.4/5/6/7/8

 

 

Title: Simulation, modelling and characterisation of quasi-ballistic transport in nanometer sized field effect transistors: from TCAD to atomistic simulation

 

Author: Stephan Roche, Thierry Poiroux, Gilles Lecarval, Sylvain Barraud, Francois Triozon, Martin Persson, Yann Michel Niquet

 

Addresses:
Commissariat a l
Energie Atomique, INAC, SP2M, L_sim 17 rue des Martyrs, 38054 Grenoble, France.
Commissariat a l
Energie Atomique, Leti-MINATEC, 17 rue des Martyrs, 38054 Grenoble, France.
Commissariat a l
Energie Atomique, Leti-MINATEC, 17 rue des Martyrs, 38054 Grenoble, France.
Commissariat a l
Energie Atomique, Leti-MINATEC, 17 rue des Martyrs, 38054 Grenoble, France.
Commissariat a l
Energie Atomique, Leti-MINATEC, 17 rue des Martyrs, 38054 Grenoble, France.
Commissariat a l
Energie Atomique, INAC, SP2M, L_sim, 17 rue des Martyrs, 38054 Grenoble, France.
Commissariat a l
Energie Atomique, INAC, SP2M, L_sim, 17 rue des Martyrs, 38054 Grenoble, France

 

Abstract: In this paper, we review and contrast some computational methodologies to investigate charge transport in low dimensional materials and devices. This includes ultra-scaled MOS devices as well as nanowires-based field effects transistors or carbon nanotubes-based emerging devices. After presenting the context of nanodevice simulation, the focus will be made on the limits for ballistic transport in these several types of nanodevices.

 

Keywords: charge transport; transistor simulation; Monte Carlo simulation; tight binding; non equilibrium green functions; Kubo approach; Landauer-Buttiker method; modelling; field effect transistors; ultra-scaled MOS devices; nanowires; carbon nanotubes; nanodevices; nanotechnology.

 

DOI: 10.1504/IJNT.2010.031724

 

Int. J. of Nanotechnology, 2010 Vol.7, No.4/5/6/7/8, pp.348 - 366

 

Available online: 21 Feb 2010

 

 

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