Title: Excess silicon concentration dependence of the structural and optical properties of silicon nanocrystals embedded in silicon oxide matrix

Authors: Yussof Bin Wahab, Yeong Wai Woon, Karim Bin Deraman

Addresses: Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia. ' Physics Department, Faculty of Science, University Teknologi Malaysia, 81310 Skudai, Johor, Malaysia. ' Physics Department, Faculty of Science, University Teknologi Malaysia, 81310 Skudai, Johor, Malaysia

Abstract: Silicon (Si) nanocrystals embedded in Si oxide matrix have been formed by rapid thermal annealing of sub-stoichiometric Si oxide films (SiO_x with x < 2). The SiO_x films were deposited by co-sputtering of Si oxide and Si target using magnetron RF sputtering technique. The Si-to-SiO₂ ratio was controlled by varying the number of Si chips being placed on the pure SiO₂ target during sputtering. Rapid thermal anneal in nitrogen gas at 1100°C lead to the decomposition of SiO_x into Si nanocrystals and SiO₂. The structural (size of nanocrystals) and optical properties (absorption and luminescence) of Si nanocrystals embedded in oxide matrix, were found, strongly depend on the initial excess Si concentration in SiO_x films.

Keywords: silicon nanocrystals; structural properties; optical properties; silicon oxide matrix; nanomaterials; nanotechnology; magnetron RF sputtering; nanocrystal size; optical properties; absorption; luminescence.

DOI: 10.1504/IJNM.2010.029925

International Journal of Nanomanufacturing, 2010 Vol.5 No.1/2, pp.79 - 87

Published online: 03 Dec 2009 *

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