Title: In situ synthesis of Zn₂SiO₄:V obtained by incorporation of ZnO:V nanoparticles in silica host matrix

Authors: L. El Mir, J. El Ghoul, C. Barthou, M. Saadoun, S. Alaya

Addresses: Laboratoire de Physique des Materiaux et des Nanomateriaux, Appliquee a l'Environnement, Faculte des Sciences de Gabes, Cite Erriadh Manara Zrig, 6072 Gabes, Tunisie. ' Laboratoire de Physique des Materiaux et des Nanomateriaux, Appliquee a l'Environnement, Faculte des Sciences de Gabes, Cite Erriadh Manara Zrig, 6072 Gabes, Tunisie. ' Institut des NanoSciences de Paris (INSP) UMR CNRS 7588, Universites Paris 6 et Paris 7, Campus Boucicaut, 140 rue de Lourmel-F-75015, Paris. ' Centre de Recherches et des Technologies de l'Energie (CRTE), Laboratoire de Photovoltaique et des Semiconducteurs, BP 95, 2050 Hammam-Lif, Tunisie. ' Physics Department, College of Science, King Faisal University, P.O. Box 400, 31982 Hofuf, Saudi Arabia

Abstract: Zn₂SiO₄:V particles embedded in silica host matrix were prepared by a simple solid-phase reaction after the incorporation of vanadium doped ZnO nanoparticles in silica monolith using sol-gel method. The obtained sample exhibits a strong PL band in the visible range and two narrow emission bands in the UV range under high power excitation. Photoluminescence excitation (PLE) measurements show different origins of the visible emission (or of the emission bands). It is suggested that ZnO excitonic emissions and radiative defects, resulting from heat treatment and crystallisation at the interfaces between Zn₂SiO₄:V and silica host matrix, are responsible for these luminescence bands.

Keywords: Zn2SiO4; zinc oxide; ZnO nanoparticles; sol-gel; optical materials; nanotechnology; photoluminescence; zinc silicate.

DOI: 10.1504/IJNP.2009.028762

International Journal of Nanoparticles, 2009 Vol.2 No.1/2/3/4/5/6, pp.291 -299

Published online: 30 Sep 2009 *

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