Article: CdO/PSi/Si photo detector Journal: International Journal of Nanotechnology (IJNT) 2009 Vol.6 No.10/11 pp.997 - 1005 Abstract: In spite of various works which were carried out on CdO and porous Si (PSi) separately, the interesting properties of CdO/PSi/Si system are not known well. In this work, we study the photoconductivity of deposited CdO layer on PSi/Si system. PS and CdO layers were prepared by electrochemical anodisation of p-type crystalline silicon and pulsed laser deposition (PLD) of cadmium oxide target. Then samples were annealed in air at 500°C to increase their optical transmissions to a value as large as 90% for wavelengths above 700 nm. The XRD study reveals that the annealed films are polycrystalline with grain size of about 25 nm. SEM micrograph of the CdO/PSi/Si system indicates that CdO layer has sub micron granular structure on nano-porous silicon structure. The spectral responsivity of the photodiodes was measured in Vis.-near IR region. The light sensitivity showed linear behaviour vs. reverse bias voltage from 0.1 V to 3 V. The dark and photocurrent characteristics of CdO/PSi/Si structure showed ms response time. Experimental data shows that samples have good response to near infrared wavelengths. Inderscience Publishers - linking academia, business and industry through research

Title: CdO/PSi/Si photo detector

Authors: A. Azarian, A. Iraji zad, S.M. Mahdavi, M. Samadpoor

Addresses: Department of Physics, Sharif University of Technology, P.O. Box 11155-9161, Tehran, Iran; Department of Physics, University of Qom, P.O. Box 37165, Qom, Iran. ' Department of Physics, Sharif University of Technology, P.O. Box 11155-9161, Tehran, Iran; Institute for Nanoscience and Nanotechnology, Sharif University of Technology, P.O. Box 11155-8639, Tehran, Iran. ' Department of Physics, Sharif University of Technology, P.O. Box 11155-9161, Tehran, Iran; Institute for Nanoscience and Nanotechnology, Sharif University of Technology, P.O. Box 11155-8639, Tehran, Iran. ' Department of Physics, Sharif University of Technology, P.O. Box 11155-9161, Tehran, Iran

Abstract: In spite of various works which were carried out on CdO and porous Si (PSi) separately, the interesting properties of CdO/PSi/Si system are not known well. In this work, we study the photoconductivity of deposited CdO layer on PSi/Si system. PS and CdO layers were prepared by electrochemical anodisation of p-type crystalline silicon and pulsed laser deposition (PLD) of cadmium oxide target. Then samples were annealed in air at 500°C to increase their optical transmissions to a value as large as 90% for wavelengths above 700 nm. The XRD study reveals that the annealed films are polycrystalline with grain size of about 25 nm. SEM micrograph of the CdO/PSi/Si system indicates that CdO layer has sub micron granular structure on nano-porous silicon structure. The spectral responsivity of the photodiodes was measured in Vis.-near IR region. The light sensitivity showed linear behaviour vs. reverse bias voltage from 0.1 V to 3 V. The dark and photocurrent characteristics of CdO/PSi/Si structure showed ms response time. Experimental data shows that samples have good response to near infrared wavelengths.

Keywords: CdO layers; cadmium oxide; porous silicon; photodetectors; PLD; electrochemical etching; pulsed laser deposition; photoconductivity; Iran; nanotechnology.

DOI: 10.1504/IJNT.2009.027562

International Journal of Nanotechnology, 2009 Vol.6 No.10/11, pp.997 - 1005

Published online: 31 Jul 2009 *

Full-text access for editors Full-text access for subscribers Purchase this article Comment on this article

Title: CdO/PSi/Si photo detector

Keep up-to-date