Title: A study of the electrical characteristics of nanoscale Si/strained SiGe pMOSFET

Authors: Morteza Fathipour, Behrooz Abbaszadeh

Addresses: Department of Electrical and Computer Engineering, University of Tehran, North Kargar St., Iran. ' Department of Electrical Engineering, Islamic Azad University, Ghaemshahr branch, Iran

Abstract: We have studied the electrical characteristics of the nanoscale Si/strained SiGe P channel MOSFET. The heterostructure employed in this structure induces compressive strain in the SiGe layer and causes hole confinement in the SiGe channel away from the SiO2/Si interface. As a result hole mobility improves. As two inversion layers are formed in this device two characteristic threshold voltages are employed to explain its behaviour. We have shown that the difference between these two threshold voltages increase as the Ge mole fraction increases. The effect the Ge mole fraction on drain current, maximum transconductance, gate capacitance and drain-source conductance is investigated.

Keywords: compressive strain; Ge mole fraction; heterostructure; hole mobility; MOSFET; silicon germanium; nanotechnology; Iran; drain current; maximum transconductance; gate capacitance; drain source conductance.

DOI: 10.1504/IJNT.2009.027552

International Journal of Nanotechnology, 2009 Vol.6 No.10/11, pp.882 - 891

Published online: 31 Jul 2009 *

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