Title: Investigation on the origin of green light emission in ZnO bulk materials

Authors: Jinghai Yang, Lili Yang, Yongjun Zhang, Dandan Wang, Jihui Lang, Qingxiang Zhao

Addresses: The Institute of Condensed State Physics, Jilin Normal University, Siping 136000, PR China; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, PR China. ' The Institute of Condensed State Physics, Jilin Normal University, Siping 136000, PR China; Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, PR China. ' The Institute of Condensed State Physics, Jilin Normal University, Siping, 136000, PR China. ' The Institute of Condensed State Physics, Jilin Normal University, Siping, 136000, PR China. ' The Institute of Condensed State Physics, Jilin Normal University, Siping, 136000, PR China. ' Physical Electronics and Photonics, Department of Science and Technology (ITN), Linkoping University, SE-60174 Norrkoping, Sweden

Abstract: ZnO bulk materials were implanted by O and Zn with different concentration and their photoluminescence (PL) properties were investigated in detail. The results clearly show that O and Zn implantation indeed have great influence on the green light emission. By comparing the PL spectra for the samples with different implantations, O_i, Zn_i and Cu-related defects have been excluded from the possibility of the origin of green light emission step by step. Finally, it can be concluded that V_Zn is responsible to the observed green light emission, which has good agreement with the theoretical results from first principle calculation.

Keywords: bulk ZnO; zinc oxide; implantation; photoluminescence; green light emission; bulk materials.

DOI: 10.1504/IJMPT.2009.024668

International Journal of Materials and Product Technology, 2009 Vol.34 No.3, pp.360 - 368

Published online: 14 Apr 2009 *

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