Title: The effects of hydrogen on the electrical and optical properties of ZnO

Authors: Y. Hayashi, M. Arita, C.G. Lee

Addresses: Kyushu University, Fukuoka 819–0395, Japan; Changwon National University, Changwon, 641–773, Korea. ' Kyushu University, Fukuoka 819–0395, Japan. ' Changwon National University, Changwon, 641–773, Korea

Abstract: Hydrogen atoms introduced into oxides are considered to modify the electronic structure of the compounds. The effect of hydrogen on the electrical and optical properties of zinc oxide (ZnO) films was examined. The electronic state of hydrogen-doped ZnO films was studied by Ultraviolet Photoelectron Spectroscopy (UPS) and cathode luminescence measurements. Hydrogen introduced in ZnO forms impurity donor states in the band gap of the compounds and shows a specific change in the material properties.

Keywords: hydrogen effect; zinc oxide; hydrogen-doped ZnO films; cathode luminescence; electrical properties; optical properties.

DOI: 10.1504/IJNHPA.2009.023824

International Journal of Nuclear Hydrogen Production and Applications, 2009 Vol.2 No.1, pp.21 - 28

Published online: 13 Mar 2009 *

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