Int. J. of Nanotechnology   »   2009 Vol.6, No.3/4

 

 

Title: Raman frequency dispersion studies of substituted polythiophene films

 

Author: Malgorzata Jadamiec, Mieczyslaw Lapkowski, David L. Officer, Pawel Wagner, Keith C. Gordon

 

Addresses:
Department of Physical Chemistry and Technology of Polymers, Silesian University of Technology, ul. Marcina Strzody 9, PL-44100 Gliwice, Poland; Department of Chemistry and MacDiarmid Institute for Advanced Materials and Nanotechnology, University of Otago, Union Place, Dunedin, New Zealand.
Department of Physical Chemistry and Technology of Polymers, Silesian University of Technology, ul. Marcina Strzody 9, PL-44100 Gliwice, Poland; Centre of Polymer and Carbon Materials, Polish Academy of Sciences, ul. Sowinskiego 5, PL-44121 Gliwice, Poland.
Department of Chemistry, University of Wollongong, Wollongong, Australia.
Department of Chemistry, University of Wollongong, Wollongong, Australia.
Department of Chemistry and MacDiarmid Institute for Advanced Materials and Nanotechnology, University of Otago, Union Place, Dunedin, New Zealand

 

Abstract: Styryl substituted terthiophene species have been used to produce neutral polythiophene species which show distinct Raman frequency dispersion. The polythiophene line B band shows dispersion values of: -0.12, -0.07, -0.1 cm−1 nm−1 for the phenyl, para-methoxy phenyl and para-cyano phenyl systems respectively. This is smaller than the dispersion values reported for polythiophene presumably because the intramolecular stacking forces that oppose the normal dispersion effect are suppressed due to the substituents we have used.

 

Keywords: polythiophene films; Raman frequency dispersion; conjugation length; styryl substituted terthiophene; intramolecular stacking forces; nanotechnology.

 

DOI: 10.1504/IJNT.2009.022924

 

Int. J. of Nanotechnology, 2009 Vol.6, No.3/4, pp.344 - 354

 

Available online: 03 Feb 2009

 

 

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