Title: A new approach to silicon wafer edge treatment by Ultrasonically Assisted Polishing (UAP)

Authors: Weiping Yang, Yongbo Wu, Masana Kato

Addresses: Institute of Mechanical and Electric Engineering, Nanjing University of Aeronautics and Astronautics, 29 Yudao St., Nanjing, Jixangsu 210016, PR China. ' Department of Machine Intelligence and Systems Engineering, Akita Prefectural University, 84-4 Tsuchiya-ebinokuchi, Yurihonjo, Akita 015-0055, Japan. ' Department of Machine Intelligence and Systems Engineering, Akita Prefectural University, 84-4 Tsuchiya-ebinokuchi, Yurihonjo, Akita 015-0055, Japan

Abstract: This paper proposes a new method for silicon wafer edge treatment by Ultrasonically Assisted Polishing (UAP), in which an ultrasonic elliptic vibration polishing pad holder is employed. Thus the speed of the polishing pad relative to the wafer is increased, and a small gap is generated between the pad and the work surface so that the slurry intrudes easily into the polishing area. Experimental results showed that the wafer surface roughness and the material removal rate obtained by UAP were better by over 58% and over 24%, respectively, than those without UAP.

Keywords: silicon wafers; wafer edge treatment; ultrasonic assisted polishing; UAP; surface roughness; material removal rate; MRR.

DOI: 10.1504/IJMPT.2008.018017

International Journal of Materials and Product Technology, 2008 Vol.31 No.2/3/4, pp.159 - 175

Published online: 27 Apr 2008 *

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