Title: Band structure investigation of strained Si1-xGex/Si coupled quantum wells

Authors: F. Lu, W.J. Fan, Y.X. Dang, D.H. Zhang, S.F. Yoon, R. Wang

Addresses: School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore. ' School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore. ' School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore. ' School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore. ' School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore'School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore

Abstract: The band structure of Si_1-xGe_x/Si coupled quantum wells (CQW) was calculated with the 8-band k · p method. Both strain and spin-orbit split-off band effect were taken into account. The subband energy of the Si_0.6Ge_0.4/Si quantum well as a function of barrier width and well width was calculated. Barrier width varies between 20~60 Å while well width varies between 30~110 Å. Finally, the relationship between subband energy and Ge composition range from 10% to 60% was also shown.

Keywords: band structure; coupled quantum wells; 8-band k · p method; strain effect; valence band; hole subband energy; coupling effect; nanotechnology.

DOI: 10.1504/IJNT.2007.013977

International Journal of Nanotechnology, 2007 Vol.4 No.4, pp.431 - 440

Published online: 05 Jun 2007 *

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