Facile fabrication of carbon nanotube network thin film transistors for device platforms
by H.Y. Zheng; N.O.V. Plank
International Journal of Nanotechnology (IJNT), Vol. 14, No. 1/2/3/4/5/6, 2017

Abstract: Carbon nanotube network thin film transistors with channel lengths of 10-40 μm are fabricated from a nanotube buckypaper with 99% semiconducting carbon nanotubes by surfactant free solution routes. The carbon nanotubes are suspended in 1,2-dichlorobenzene by ultrasonication at concentrations of 7.9 μg/ml, 3.4 μg/ml and 2.6 μg/ml, resulting in carbon nanotube field effect transistors with tube densities ranging from 5 tube/μm² up to 32 tube/μm². The device percolation threshold is 11 tube/μm² with optimum device performances of on/off current ratio 7200, mobility 0.55 cm²/V·s and V_th = +1 V. Devices with tube density above the percolation threshold are typically metallic-like. By encapsulating with poly-4-vinylphenol cross-linked with poly-(melamine-co-formaldehyde), the hysteresis becomes independent of channel length and the device performance approaches the best devices at the percolation threshold.

Online publication date: Fri, 24-Feb-2017

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