Slurry parameters effect on Chemical–Mechanical Planarisation (CMP) of deposited silver (Ag) on chips
by Y.J. Dai, G.S. Pan, H.F. Pei, J.Z. Sun, Y. Liu, H. Du
International Journal of Surface Science and Engineering (IJSURFSE), Vol. 4, No. 3, 2010

Abstract: Ag-deposited chips composed of electrodes, which are spaced apart by photoresist, are polished by Chemical-Mechanical Planarisation (CMP). We optimise the polishing process parameters including processing pressure, rotating speed, slurry supplying rate, etc., and examine the effect of some slurry parameters such as abrasives, oxidisers, corrosives, complexing agents and surfactants and get optimum Ag CMP slurry with high Material Removal Rate (MRR) and low average roughness (Ra). Low vertical distance between Ag and photoresist is obtained by optimising metal Ag MRR and controlling polishing end-point exactly. CMP mechanism and relationship between surface defects and additives structures are elementary discussed too.

Online publication date: Fri, 14-May-2010

The full text of this article is only available to individual subscribers or to users at subscribing institutions.

 
Existing subscribers:
Go to Inderscience Online Journals to access the Full Text of this article.

Pay per view:
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.

Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Surface Science and Engineering (IJSURFSE):
Login with your Inderscience username and password:

Username:        Password:          Forgotten your password?

Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.

If you still need assistance, please email subs@inderscience.com