A study of the subsurface damaged layers in nanoscratching Online publication date: Tue, 03-Nov-2009
by Jiaxuan Chen, Yingchun Liang, Mingjun Chen, Qingshun Bai, Yulan Tang
International Journal of Abrasive Technology (IJAT), Vol. 2, No. 4, 2009
Abstract: Molecular dynamics (MD) simulations are carried out to study a three-pyramid tip nanoscratching single crystal copper. The surface integrity and subsurface damaged layers are investigated by the different scratching depths and crystal orientation. The effects show that nanoscratching process results in the extension of the high energy atoms in the subsurface from near the tool to the whole subsurface. The area of high energy atoms in subsurface is basically in consistence with that of the higher residual stress. The ordering degree of subsurface atoms decreases as the increase of scratching depths. The (100) plane body compared to the (111) plane body after scratching process, the numbers of defects in subsurface of the former are more than that of the latter, the surface integrity and the ordering degree of subsurface of the former is better than that of the latter, but the area of the subsurface damaged layers of the former is larger. It is noted that there exists the stack fault in subsurface for the (111) plane body.
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