Modelling and simulation of electronic relaxation processes in phosphorescent molecules in organic light emitting diodes
by Nadeer Aljaroudi, Taiju Tsuboi
International Journal of Computational Science and Engineering (IJCSE), Vol. 2, No. 3/4, 2006

Abstract: Simulation is made for the temperature dependences of emission intensity of phosphorescent tris(2-phenylpyridine) iridium [Ir ppy)₃] molecules doped in fluorescent N,N'-bis(3-methylphenyl)-N,N'-bis(phenyl)-benzidine (TPD) molecules from numerical calculation and compared them with the experimental result. Rate equations are constructed for the three zero-field splitting substates in the spin-triplet state T1 of the Ir(ppy)₃ guest and for the TT₁ state of the TPD host. It is concluded that (1) the increase of emission intensity above 100 K is due to the endothermic energy transfer from host to guest and (2) the decrease of PL intensity observed above 200 K is due to the energy transfer from the excited host to the neighbouring unexcited host. Calculation is extended to the case of Ir(ppy)₃ doped in aluminium tris 8-hydroxyquinoline (Alq₃) where the T₁ state of Alq₃ lies at much deeper energy than the case of TPD host.

Online publication date: Wed, 14-Mar-2007

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