Quantum corrections: a multilevel solver for the density-gradient equation
by Hedley Morris, Alfonso Limon
International Journal of Computational Science and Engineering (IJCSE), Vol. 2, No. 3/4, 2006

Abstract: Miniaturisation of integrated circuits continues to shrink device lengths to such an extent that quantum tunnelling and confinement effects change the behaviour of MOSFET devices. In this paper, we present a methodology by which to model the gate region of an n-Metal Oxide Semiconductor (MOS) device using a simplified version of the density-gradient equations. The resulting singularly perturbed ODEs are solved using an adaptive wavelet collocation method that adapts dynamically to the boundary layer. Our results are shown to be in good agreement with those from a direct numerical solution of the Schrodinger-Poisson system.

Online publication date: Wed, 14-Mar-2007

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